TARF1502E description the TARF1502E is a low noise figure and good associated gain performance at uhf,vhf and microwave frequ e n cies it is suitable for a high density surface mount since transistor has been sot523 package features o low noise figure n.f = 1.1db typ. @ f=1ghz, v ce =3v, ic=5ma n.f = 1.5db typ. @ f=2ghz, v ce =3v, ic=5ma o high gain msg = 18.5db typ. @ f=1ghz, v ce =3v, ic=15ma mag = 13db typ. @ f=2ghz, v ce =3v, ic=15ma o high transition frequency f t = 12ghz typ. @ f=2ghz, v ce =3v, ic=15ma pin configuration marking : ac1 maximum ratings v cbo collector-base voltage open emitter v ceo collector-emitter voltage open base v ebo emitter-base voltage open collector ic collector current (dc) p t total power dissipation ts = 60 ? t stg storage temperature t j operating junction temperature pin no symbol description unit 1 2 3 b e c ? 150 -65 ~ 150 symbol parameter condition value base emitter collector mw 150 v v ? 25 12 2.5 35 v ma npn planer rf transistor 4 0 5 v o j u n n www.tachyonics.co.kr - 1/12 - sep-03-2002
TARF1502E electrical characteristics ( t a = 25 ? ) collector-base voltage collector-emitter voltage collector-cut-off current emitter-cut-off current d.c current gain transition frequency collector-base capacitance performance characteristics v ce =3v, ic=15ma,f=1ghz (zs=zsopt, z l =z l opt) 10 dbm db 11 p -1db 1db compression point db db db rn noise resistance v ce =3v, ic=5ma,f=1ghz v ce =3v, ic=5ma,f=2ghz 0.12 0.06 ? nfmin minium noise figure v ce =3v, ic=5ma,f=2ghz 1.5 [s21] 2 msg mag v ce =3v, ic=5ma,f=1ghz v ce =3v, ic=15ma,f=1ghz 14.5 16 ghz 13.5 15 8 associated gain v ce =3v, ic=5ma,f=2ghz v ce =3v, ic=15ma,f=2ghz pf unit n j o u z q n b y value condition value v ce = 3v, ic = 15ma 300 100 150 v ce = 3v, ic = 15ma v cb = 10v, f = 1mhz 0.47 symbol 12 i ce = 100ua, i e = 0 i ce = 100ua, i b = 0 v cb = 10v, i e = 0 v eb = 1v, i c = 0 parameter symbol v cbo v ceo i cbo i ebo hfe f t c cb 9.5 17 18.5 12 13 1.1 g a v ce =3v, ic=15ma,f=2ghz v ce =3v, ic=5ma,f=1ghz v ce =3v, ic=5ma,f=2ghz maximum available gain 10 unit 20 12 25 14 v v n j o u z q n b y n a n a v ce =3v, ic=5ma,f=2ghz v ce =3v, ic=5ma,f=1ghz 100 v ce =3v, ic=15ma,f=2ghz v ce =3v, ic=15ma,f=1ghz insertion power gain maximum stable gain condition v ce =3v, ic=5ma,f=1ghz v ce =3v, ic=15ma,f=1ghz parameter www.tachyonics.co.kr - 2/12 - sep-03-2002
TARF1502E total power dissipation pt = f(t a ) i ce vs. v ce ( t a = 25 ? ) icc vs. v be hfe vs. icc * $ $ < |